| PART |
Description |
Maker |
| HM628512C HM628512CLFP-5 HM628512CLFP-5SL HM628512 |
4 M SRAM (512-kword x 8-bit) 四米的SRAM12 - KWord的8位）
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 16-CDIP -55 to 125
Octal Buffers And Line Drivers With 3-State Outputs 20-CFP -55 to 125
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 74LVT16244 74LVT16244MTDX 74LVTH16244MEA 74LVTH162 |
4K, 512 X 8, 2.5V SER EE, -40C to 85C, 8-MSOP, TUBE
Low Voltage16-Bit Buffer/Line Driver
Low Voltage 16-Bit Buffer/Line Driver with 3-STATE Outputs
|
Fairchild Semiconductor
|
| MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
|
OKI SEMICONDUCTOR CO., LTD.
|
| IC-WGBLCCWGC2 IC-WGCHIP IC-WGBLCCWGC2WG1R |
14-BIT DIFFERENTIAL SCANNING OPTO ENCODER
|
IC-Haus GmbH
|
| STM32F101RDT6XXX STM32F101ZET6TR |
High-density access line, ARM-based 32-bit MCU with 256 to 512 KB Flash, 9 timers, 1 ADC and 10 communication interfaces
32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP144
|
STMicroelectronics
|
| SRI51211 SRI512 SRI512-SBN18/1GE |
512-bit ISO14443-B contactless memory with 2 binary counters, 5 OTP blocks and anti-collision
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
|
ST Microelectronics
STMicroelectronics
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| LC587202A LC587204A LC587206A LC587208A |
4-bit Single-chip Microcontrollers LCD driver ROM: 2, 4, 6, or 8 K x 16 bits, RAM: 512 x 4 bits
4-Bit Single-Chip Microcontroller LCD Driver ROM:2 /4 /6 /or8 K x 16 bits / RAM:512 x4 bits
4-Bit Single-Chip Microcontroller LCD Driver ROM:246or8 K x 16 bits RAM:512 x4 bits
CMOS IC
4-Bit Single-Chip Microcontroller LCD Driver ROM:2,4,6,or8 K x 16 bits, RAM:512 x4 bits
Single-Chip 4-Bit Microcontroller with LCD Driver,512 ×4bit RAM,4K× 16 Bit ROM on chip(单片4位微控制器（带LCD驱动器，512 ×4位RAMK× 16位ROM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| LPC2157 LPC2158 LPC215709 LPC2157FBD100551 |
Single-chip 16-bit/32-bit microcontrollers; 512 kB flash, with 32 segment x 4 LCD driver, SOT407-1 (LQFP100), Tray Dry Pack, Bakeable, Single 32-BIT, FLASH, 60 MHz, RISC MICROCONTROLLER, PQFP100
Single-chip 16-bit/32-bit microcontrollers 512 kB flash, with 32 segment x 4 LCD driver
|
NXP Semiconductors N.V.
|
| M41ST84W M41ST84WMH M41ST84WMH1 M41ST84WMH1TR M41S |
5.0 or 3.0V / 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS
5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS
8 WIRE INLINE COUPLER CROSS-PI 5.0.0V124 × 8串行实时时钟与监督职
SPEAKER BINDING POSTS, GOLD 2 PACK (BLCK & RED) 5.0.0V5124 × 8串行实时时钟与监督职
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| MB81464 MB81464-15 MB81464-12 |
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY
MOS 262144 Bit DRAM
|
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
